Transparent Electronics: From Materials to Devices
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品牌: Rodrigo MartinsElvira FortunatoPedro BarquinhaLuis Pereira
基本信息出版社:Wiley; 2 (2012年4月17日)精装:312页正文语种:英语ISBN:0470683732条形码:9780470683736商品尺寸:16.8 x 2.1 x 24.4 cm商品重量:680 gASIN:0470683732商品描述内容简介Transparent electronics is emerging as one of the most promising technologies for the next generation of electronic products, away from the traditional silicon technology. It is essential for touch display panels, solar cells, LEDs and antistatic coatings.
The book describes the concept of transparent electronics, passive and active oxide semiconductors, multicomponent dielectrics and their importance for a new era of novel electronic materials and products. This is followed by a short history of transistors, and how oxides have revolutionized this field. It concludes with a glance at low-cost, disposable and lightweight devices for the next generation of ergonomic and functional discrete devices. Chapters cover:
Properties and applications of n-type oxide semiconductorsP-type conductors and semiconductors, including copper oxide and tin monoxideLow-temperature processed dielectricsn and p-type thin film transistors (TFTs) – structure, physics and brief historyPaper electronics – Paper transistors, paper memories and paper batteriesApplications of oxide TFTs – transparent circuits, active matrices for displays and biosensorsWritten by a team of renowned world experts,Transparent Oxide Electronics: From Materials to Devicesgives an overview of the world of transparent electronics, and showcases groundbreaking work on paper transistors
目录Preface xiiiAcknowledgments xv1 Introduction 11.1 Oxides and Transparent Electronics: FundamentalResearch or Heading Towards Commercial Products? 11.2 The Need for Transparent (Semi) Conductors 31.3 Reaching Full Transparency: Dielectrics and Substrates 52 N-type Transparent Semiconducting Oxides 92.1 Introduction: Binary and Multicomponent Oxides 92.1.1 Binary Compounds: the Examples of Zinc Oxide and Indium Oxide 92.1.2 Ternary and Quaternary Compounds: the Examples of Indium-Zinc Oxide and Gallium-Indium-Zinc Oxide 122.2 Sputtered n-TSOs: Gallium-Indium-Zinc Oxide System 162.2.1 Dependence of the Growth Rate on Oxygen Content in the Ar+O2 Mixture and Target Composition 162.2.2 Structural and Morphological Properties 182.2.3 Electrical Properties 222.2.3.1 Effect of oxygen content in the Ar+O2 mixture222.2.3.2 Effect of composition (binary, ternary and quaternarycompounds)242.2.3.3 Effect of annealing temperature272.2.3.4 Additional considerations about the conductionmechanisms in oxide semiconductors302.2.3.5 Effect of thickness (ds)392.2.3.6 Electrical stability measurements392.2.4 Optical Properties 412.2.4.1 General considerations about the optical measurements412.2.4.2 Effect of oxygen content in the Ar+O2 mixture432.2.4.3 Effect of composition (binary and multicomponent oxides)442.2.4.4 Effect of annealing temperature462.3 Sputtered n-TSOs: Gallium-Zinc-Tin Oxide System 492.4 Solution-processed n-TSOs 512.4.1 ZTO by Spray-pyrolysis 512.4.2 ZTO by Sol-gel Spin-coating 522.4.3 GIZO Sol-gel by Spin-coating 523 P-type Transparent Conductors and Semiconductors 633.1 Introduction 633.2 P-type Transparent Conductive Oxides 643.3 Thin Film Copper Oxide Semiconductors 663.3.1 Role of Oxygen in the Structure, Electrical and Optical Performance 703.3.1.1 Structure evaluation 703.3.1.2 Electrical properties evaluation 713.3.1.3 Optical properties evaluation 743.4 Thin Film Tin Oxide Semiconductors 753.4.1 Structure, Composition and Morphology of Tin Oxide Films 793.4.1.1 Structure evaluation 793.4.1.2 Morphology evaluation 843.4.2 Electrical and Optical Properties of Tin Oxide Films 843.4.2.1 Electrical properties evaluation 843.4.2.2 Capacitance measurements 893.4.2.3 Optical properties evaluation 924 Gate Dielectrics in Oxide Electronics 1014.1 Introduction 1014.2 High-k Dielectrics: Why Not? 1024.3 Requirements 1034.4 High-k Dielectrics Deposition 1064.5 Sputtered High-k Dielectrics in Oxide TFTs 1064.6 Hafnium Oxide 1074.6.1 Multicomponent Co-sputtered HfO2 Based Dielectrics 1174.6.2 Multicomponent Dielectrics from Single Target 1264.7 Tantalum Oxide (Ta2O5) 1304.7.1 Multicomponent Ta2O5 Based Dielectrics 1334.8 Multilayer Dielectrics 1384.9 High-k Dielectrics/Oxide Semiconductors Interface 1414.10 Summary 1465 The (R)evolution of Thin-Film Transistors (TFTs) 1555.1 Introduction: Device Operation, History and Main Semiconductor Technologies 1555.1.1 Device Structure and Operation 1555.1.2 Brief History of TFTs 1615.1.3 Comparative Overview of Dominant TFT Technologies 1685.2 Fabrication and Characterization of Oxide TFTs 1705.2.1 N-type GIZO TFTs by Physical Vapor Deposition 1715.2.1.1 Effect of oxygen content in the Ar + O2 mixture1725.2.1.2 Effect of composition (binary, ternaryand quaternary compounds) 1735.2.1.3 Effect of annealing temperature 1795.2.1.4 Influence of source-drain electrodes material 1815.2.1.5 Influence of passivation layer 1855.2.2 N-type GZTO TFTs by Physical Vapor Deposition 1875.2.3 N-type Oxide TFTs by Solution Processing 1895.2.3.1 ZTO TFTs by spray-pyrolysis 1895.2.3.2 ZTO TFTs by sol-gel spin-coating 1895.2.3.3 GIZO TFTs by sol-gel spin-coating 1925.2.4 P-type Oxide TFTs by Physical Vapor Deposition 1935.2.4.1 Cu2O TFTs by sputtering 1935.2.4.2 SnO TFTs by sputtering 1955.2.5 N-type GIZO TFTs with Sputtered Dielectrics 1965.2.5.1 Tantalum-based dielectrics 1985.2.5.2 Hafnium-based dielectrics 2016 Electronics With and On Paper 2116.1 Introduction 2116.2 Paper in Electronics 2126.3 Paper Properties 2146.3.1 Structure, Morphology and Thermal Properties 2146.3.2 Electrical Properties of the Paper 2186.3.2.1 The electrical resistivity 2186.3.2.2 Electrical capacitance 2196.3.2.3 Paper capacitance in less compact and porous paper structures 2206.4 Resistivity Behaviour of Transparent Conductive Oxides Deposited on Paper 2236.5 Paper Transistors 2256.5.1 Current Transport in Paper Transistors 2286.6 Floating Gate Non-volatile Paper Memory Transistor 2306.6.1 Memory Paper Device Feasibility and Stability 2336.6.2 Memory Selective and Charge Retention Time Behaviors 2346.7 Complementary Metal Oxide Semiconductor Circuits With and On Paper – Paper CMOS 2376.7.1 Capacitance-Voltage and Current-Voltage Characteristics of n/p-type Paper Transistors 2406.7.2 N- and P-channel Paper FET Operation 2436.7.3 CMOS Inverter Working Principles 2446.7.4 Paper CMOS Performance 2466.8 Solid State Paper Batteries 2496.9 Electrochromic Paper Transistors 2526.10 Paper UV Light Sensors 2557 A Glance at Current and Upcoming Applications 2677.1 Introduction: Emerging Areas For (Non-)transparent Electronics Based On Oxide Semiconductors 2677.2 Active Matrices for Displays 2687.2.1 Display Market Overview and Future Trends 2687.2.2 Driving Schemes and TFT Requirements for LCD and OLED Displays 2697.2.3 Displays With Oxide-based Backplanes 2717.3 Transparent Circuits 2737.3.1 Inverters and Ring Oscillators 2737.3.2 The Introduction of Oxide CMOS 2757.4 Oxide Semiconductor Heterojunctions 2787.4.1 Oxide Semiconductor Heterojunctions In the Literature 2787.4.2 GIZO Heterojunctions Fabricated at CENIMAT 2797.5 Field effect Biosensors 2807.5.1 Device Types and Working Principles 2807.5.2 Oxide-based Biosensors Fabricated at CENIMAT 281Index
