Breakdown Phenomena in Semiconductors and Semiconductor Devices (Selected Topics in Electronics and半导体与半导体器件中的击穿现象
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作者： Michael Levinshtein等著
出 版 社：
出版时间： 2005-9-1字数：版次： 1页数： 208印刷时间： 2005/09/01开本： 16开印次： 1纸张： 胶版纸I S B N ： 9789812563958包装： 精装内容简介
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
目录
PretQce
1. Introductory Chapter
1.1 Elementary act of impact ionization
1.2 Auger recombination.
1.3 Energy of electrons and holes as a function of electric field
1.4 Main approaches for describing ionization phenomena
1.4.1 Approximation of the characteristic breakdown field R.
1.4.2 Monte。Carlo simulation.
1.4.3 Approximation of ionization rates
2. Avalanche Multiplication
2.1 Fundamentals of avalanche multiDlication.
2.2 Avalanche photodiodes
2.2.1 Spectral sensitivity
2.2.2 Dark current
2.2.3 Quantum efficiency
2.2.4 Time response.
2.2.5 Multiplication factor.
2.2.6 Avalanche excess noise
3. Static Avalanche Breakdown
3.1 Introduction
3.2 General form of the static“breakdown”current—voltage characteristic
3.2.1 Microplasma breakdown.
3.2.2 Homogeneous(“mature”)breakdown.
3.2.2.1 Contact resistivity
3.2.2.2 Thermal resistance.
3.2.2.3 Space—charge resistance.
……
4 Avalanche injection
5 Dynamic breakdown