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数字集成电路设计透视(第2版)(影印版)(国外大学优秀教材微电子类系列)(Digital Integrated Circuits:A Design Perspective)

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  分類: 图书,教材教辅与参考书,大学,工科,
  品牌: 拉贝

基本信息·出版社:清华大学出版社

·页码:767 页

·出版日期:2007年

·ISBN:7302079684

·条形码:9787302079682

·包装版本:影印版

·装帧:平装

·开本:16

·正文语种:英语

·丛书名:国外大学优秀教材微电子类系列

·外文书名:Digital Integrated Circuits:A Design Perspective

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内容简介《数字集成电路设计透视》(第2版)(影印版)的特点主要包括:(1)将数字集成电路设计中电路与系统的视角统一起来,在系统深入地介绍了深亚微米条件下半导体器件的知识和最基本的反相器后,作者逐渐将这些基础知识引入到更加复杂的模块,比如门、寄存器、控制器、加法器、乘法器和存储器等。在深亚微米的设计条件下,设计者不仅仅需要考虑整个系统的设计问题,还要随时警惕在电路级——比如器件和连线所带来的问题。(2)《数字集成电路设计透视》(第2版)(影印版)是第一本将数字集成电路设计问题集中在深亚微米条件下的参考书,并且提供了一个深亚微米条件下的简晶体管模型。(3)书中的内容紧扣当今数字集成电路设计的核心问题,并通过大量的设计实例向读者介绍了最新的设计技术和工程发展现状与趋势。

编辑推荐《数字集成电路设计透视》(第2版)(影印版)针对深亚微米条件下设计人员所面对的新挑战,例如互连线问题、信号完整性问题、时钟分布问题、功耗问题等,全书都做了非常详细的论述。

目录

Chapterl: Introduction

1.1 A Historical Perspective

1.2 Issues in Digital Integrated Circuit Design

1.3 To Probe Further

1.4 Exercises

PART 1: A CIRCUIT PERSPECTIVE

Chapter 2: The Devices

2.1 Introduction

2.2 The Diode

2.2.1 A First Glance at the Device

2.2.2 Static Behavior

2.2.3 Dynamic, or Transient, Behavior

2.2.4 The Actual Diode-Secondary Effects

2.2.5 The SPICE Diode Model

2.3 The MOS(FET) Transistor

2.3.1 A First Glance at the Device

2.3.2 Static Behavior

2.3.3 Dynamic Behavior

2.3.4 The Actual MOS Transistor-Secondary Effects

2.3.5 SPICE Models for the MOS Transistor

2.4 The Bipolar Transistor

2.4.1 A First Glance at the Device

2.4.2 Stalic Behavior

2.4.3 Dynamic Behavior

2.4.4 The Actual Bipolar Transistor-Secondary Effects

2.4.5 SPICE Models for the Bipolar Transistor

2.5 A Word on Process Variations

2.6 Perspective: Future Device Developments

2.7 Summary

2.8 To Probe Further

2.9 Exercises and Design Problems

Appendlx A: Layout Design Rules

Appendlx B: Small-Slgnal Models

Chapter 3: The Inverter

3.1 Introduction

3.2 Delinitions and Properties

3.2.1 Area and Complexity

3.2.2 Functionality and Robustness: The Static Behavior

3.2.3 Performance: The Dynamic Behavior

3.2.4 Power and Energy Consumption

3.3 The Static CMOS Invener

3.3.1 A First Glance

3.3.2 Evaluating the Robustness of the CMOS Inverter: The Static Behavior

3.3.3 Perfonnance of CMOS Inverter: The Dynamic Behavior

3.3.4 Power Consumption and Power-Delay Product

3.3.5 A Look into the Future: Effects of Technology Scaling

3.4 The Bipolar ECL Inverter

3.4.1 Issues in Bipolar Digital Design: A Case Study

3.4.2 The Emitter-Coupled Logic (ECL) Gate at a Glance

3.4.3 Robustness and Noise Immunity: The Steady-State Characteristics

3.4.4 ECL Switching Speed: Thc Transient Behavior

3.4.5 Power Consumption

3.4.6 Looking Ahead: Scaling the Technology

3.5 Perspective: Area, Perfonnance, and Dissipation

3.6 Summary

3.7 To Probe Further

3.8 Exercises and Design Problems

Chapter 4: Designing Combinational Logk Cates in CMOS

4.1 Introduction

4.2 Static CMOS Design

4.2.1 Complementary CMOS

4.2.2 Ratioed Logic

4.2.3 Pass-Transistor Logic

4.3 Dynamic CMOS Design

4.3.1 Dynamic Logic: Basic Principles

4.3.2 Perfonnance of Dynamic Logic

4.3.3 Noise Considerations in Dynamic Design

4.3.4 Cascading Dynamic Gates

4.4 Power Consumption in CMOS Gates

4.4.1 Switching Activity of a Logic Gate

4.4.2 Glitching in Static CMOS Circuits

4.4.3 Short-Circuit Currents in Static CMOS Circuits

4.4.4 Analyzing Power Consumption Using SPICE

4.4.5 Low-Power CMOS Design

4.5 Perspective: How to Choose a Logic Style

4.6 Summary

4.7 To Probe Further

4.8 Exercises and Design Problems

Appendix C: Layout Techniques for Complex Cates

Chapter 5: Very High Perfonnance Digital Circuits

5.1 Introduction

5.2 Bipolar Gate Design

5.2.1 Logic Design in ECL

5.2.2 Differential ECL

5.2.3 Current Mode Logic

5:2.4 ECL with Active Pull-Downs

5.2.5 Altemative Bipolar Logic Styles

5.3 The BiCMOS Approach

5.3.1 The BiCMOS Gate at a Glance

5.3.2 The Static Behavior and Robustness Issues

5.3.3 Perfonnance of the BiCMOS Inverter

5.3.4 Power Consumption

5.3.5 Technology Scaling

5.3.6 Designing BiCMOS Digital Gates

5.4 Digital Gallium Arsenide Design *

5.4.1 GaAs Devices and Their Properties

5.4.2 GaAs Digital Circuit Design

5.5 Low-Temperature Digital Circuits *

5.5.1 Low-Temperature Silicon Digital Circuits

5.5.2 Superconducting Logic Circuits

5.6 Perspective: When to Use High-Performance Technologies

5.7 Summary

5.8 To Probe Further

5.9 Exercises and Design Problems

Appendlx D: The Schottky-Bamer Oiode

Chapter 6: Designing Sequential Logic Circuits

6.1 Introduction

6.2 Static Sequential Circuits

6.2.1 Bistability

6.2.2 Flip-Flop Classification

6.2.3 Master-Slave and Edge-Triggered FFs

6.2.4 CMOS Static Flip-Flops

6.2.5 Bipolar Static Flip-Flops

6.3 Dynamic Sequentia) Circuits

6.3.1 The Pseudostatic Latch

6.3.2 The Dynamic Two-Phase Flip-Flop

6.3.3 The C2MOS Latch

6.3.4 NORA-CMOS-A Logic Style for Pipelined Structures

6.3.5 True Single-Phase Clocked Logic (TSPCL)

6.4 Non-Bistable Sequential Circuits

6.4.1 The Schmitt Trigger

6.4.2 Monostable Sequential Circuits

6.4.3 Astable Circuits

6.5 Perspective: Choosing a Clocking Strategy

6.6 Summary

6.7 To Probe Funher

6.8 Exercises and Design Problems

PART 11: A SYSTEMS PERSPECTIVE

Chapter 7: Designing Arithmetic Building Blocks

7.1 Introduction

7.2 Datapaths in Digital Processor Architectures

7.3 The Adder

7.3.1 The Binary Adder: Definitions

7.3.2 The Full Adder: Circuit Design Considerations

7.3.3 The Binary Adder: Logic Design Considerations

7.4 The Multiplier

7.4.1 The Multiplier: Definitions

7.4.2 The Array Multiplier

7.4.3 Other Multiplier Structures

7.5 The Shifter

7.5.1 BarrelShifter

7.5.2 Logarithmic Shifter

7.6 Other Arithmetic Operators

7.7 Power Considerations in Datapath Structures

7.7.1 Reducing the Supply Voltage

7.7.2 Reducing the Effective Capacitance

7.8 Perspective: De.sign as aTrade-off

7.9 Summary

7.10 To Probe Further

7.11 Exercises and Design Problems

Appendix E: From Datapath Schematics to Layout

Chapter 8: Coping wlth Interconnect

8.1 Introduction

8.2 Capacitive Parasitics

8.2.1 Modeling Interconnect Capacitance

8.2.2 Capacitance and Reliability-Cross Talk

8.2.3 Capacitance and Performance in CMOS

8.2.4 Capacitance and Performance in Bipolar Design

8.3 Resistive Parasitics

8.3.1 Modeling and Scaling of Interconnect Resistance

8.3.2 Resistance and Reliability-Ohmic Voltage Drop

8.3.3 Electromigration

8.3.4 Resistance and Performance-RC Delay

8.4 Inductive Parasitics

8.4.1 Sources of Parasitic Inductances

8.4.2 Inductance and Reliability- Voltage Drop

8.4.3 Inductance and Performance-Transmission Lin5e Effects

8.5 Comments on Packaging Technology

8.5.1 Package Materials

8.5.2 Interconnect Levels

8.5.3 Thennal Considerations in Packaging

8.6 Perspective: When to Consider Interconnect Parasitics

8.7 Chapter Summary

8.8 To Probe Further

8.9 Exercises and Design Problems

Chapter 9: Timing Issues in Digital Circuits

9.1 Introduction

9.2 Clock Skew and Sequential Circuit Performance

9.2.1 Single-Phase Edge-Triggered Clocking

9.2.2 Two-Phase Master-Slave Clocking

9.2.3 Other Clocking Styles

9.2.4 How to Counter Clock Skew Problems

9.2.5 Case Study-The Digital Alpha 21164 Microprocessor

9.3 Self-Timed Circuit Design*

9.3.1 Selt-Timed Concept

9.3.2 Completion-Signal Generation

9.3.3 Self-Timed Signaling

9.4 Synchronizers and Arbiters*

9.4.1 Synchronizers-Concept and Implementation

9.4.2 Arbiters

9.5 Clock Generation and Synchronization*

9.5.1 Clock Generators

9.5.2 Synchronization at the System Level

9.6 Perspective: Synchronous versus Asynchronous Design

9.7 Summary

9.8 To Probe Further

9.9 Exerci.ses and Design Problems

Chapter 10: Designing Memory and Array Structures

10.1 Introduction

10.2 Semiconductor Memories——An Introduction

10.2.1 Memory Classification

10.2.2 Memory Architectures and Building Blocks

10.3 The Memory Core

10.3.1 Read-Only Memories

10.3.2 Nonvolati le Read-Write Memories

10.3.3 Read-Write Memories (RAM)

10.4 Memory Peripheral Circuitry

10.4.1 The Address Decoders

10.4.2 Sense Amplifiers

10.4.3 Drivers/Buffers

10.4.4 Timing and Control

10.5 Memory Reliability and Yield

10.5.1 Signal-To-Noise Ratio

10.5.2 Memory yield

10.6 Case Studies in Memory Design

10.6.1 The Programmable Logic Array (PLA)

10.6.2 A 4 Mbit SRAM

10.7 Perspective: Semiconductor Memory Trends and Evolutions

10.8 Summary

10.9 To Probe Further

10.10 Exercises and Design Problems

Chapterll: Deslgn Methodologles

11.1 Introduction

11.2 Design Analysis and Simulation

11.2.1 Representing Digital Data as a Continuous Entity

11.2.2 Representing Data as a Discrete Entity

11.2.3 Using Higher-Level Data Models

11.3 Design Verification

11.3.1 Electrical Verification

11.3.2 Timing Verification

11.3.3 Functional (or Fonnal) Verification

11.4 Implementation Approaches

11.4.1 Custom Circuit Design

11.4.2 Cell-Based Design Methodology

11.4.3 Anay-Based Implementation Approaches

11.5 Design Synthesis

11.5.1 Circuit Synthesis

11.5.2 Logic Synthesis

11.5.3 Architecture Synthesis

11.6 Validation and Testing of Manufactured Circuits

11.6.1 TestProcedure

11.6.2 Design for Testability

11.6.3 Test-Pattem Generation

11.7 Perspective and Summary

11.8 To Probe Further

11.9 Exercises and Design Problems

Problem Solutions

……[看更多目录]

 
 
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