非晶形半导体物理学PHYSICS OF AMORPHOUS SEMICONDUCTORS
分類: 图书,进口原版书,科学与技术 Science & Techology ,
作者: Kazuo Morigaki 著
出 版 社: 中国矿大出版社
出版时间: 1999-12-1字数:版次: 1页数: 418印刷时间: 1999/12/01开本:印次: 1纸张: 胶版纸I S B N : 9789810213817包装: 精装内容简介
This is a useful textbook for graduate students in the fields of solid state physics and chemistry as well as electronic engineering. Presenting the fundamentals of amorphous semiconductors dearly, it will be essential reading for young scientists intending to develop new pre-paration techniques for more ideal amorphous semiconductors e.g.a-Si:H, to fabricate stable and efficient solar cells and thin film tran-sistors and new artificial amorphous materiats such as multilayers for
quantum devices.
A large portion is devoted to the latest developments of amorphous semiconductors including electronic properties of a-Si:H, nature of weak bonds and gap states in a-Si:H, mechanisms for light-induced defect creation in a-Si:H and chalcogenides, and quantum phenomena in multilayer firms.
目录
Preface
Acknowledgement
1 Introduction
2 Disorder and glass transition
2.1 Definition of disorder
2.2 Glass transition
2.3 Glass formation
3 Preparation
3.1 Rapid quenching from the liquid phase
3.2 Rapid condensation from the gas phase
3.2.1 Physical vapour deposition
3.2.2 Chemical vapour deposition
4 Structure
4.1 Diffraction pattern
4.2 Models for the amorphous structure
4.2.1 Tetrahedrally bonded semiconductors: a-Si and a-Ge
4.2.2 Chalcogenide glasses
4.3 Medium-range order of small-angle X-ray scattering
4.4 Computer simulation
4.4.1 Monte Carlo method
4.4.2 Molecular-dynamics method
5 Electronic states
5.1 Nature of conduction and valence bands and tail states
5.2 Anderson localization
6 Gap states and defects
6.1 Gap states
6.2 Measurements of defects
6.3 Dangling bonds in a-Si and a-Si:H
6.4 Defects in chalcogenide glasses
7 Transport
7.1 Electrical conduction near the mobility edge
7.2 The scaling theory of Anderson localization
7.3 Conductivity taking into account multiple scatter-ing - deviation of conductivity from the Boltzmann conductivity
7.4 Transition from localization to delocalization and conductivity
7.5 Band conduction
7.6 Hopping conduction
7.6.1 Nearest-neighbor hopping
7.6.2 Variable-range hopping
7.7 AC conduction
7.8 Hall effect
7.9 Thermoelectric power
7.10 Relationship between the electrical conductivity and the thermoelectric power
7.11 Electron-phonon interaction and electrical conduction 1
7.12 Dispersive transport
8 Optical properties
8.1 Optical absorption
8.1.1 Band to band transition and absorption edge
8.1.2 High energy absorption
8.1.3 Tail absorption
9 Recombination
10 Electron-phonon interaction and self-trapping of carriers
11 Light-induced phenomena
12 Thermal equilibrium processes and defect formation mechanisma
13 Artificial materials
14 Summary of specific materials
References
Index