Patterning of Material Layers in Submicron Region
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品牌: U. S. TandonW. S. Khokle
基本信息出版社:*Halsted Press; 1 (1994年9月6日)平装:183页正文语种:英语ISBN:0470220635条形码:9780470220634商品尺寸:16.6 x 1.5 x 25.2 cm商品重量:481 gASIN:0470220635商品描述内容简介A coherent, comprehensive treatment of three submicron patterning technologies vying with each other to become the principal writing tool of the multitrillion dollar microelectronic industry. Features a detailed analysis of the various aspects of the three latest technologies--e-beam, ion beam and x-ray lithography. Compact synchrotron sources and x-ray mask preparation self-developing resists are described with tables and figures.目录Partial table of contents:
SUBMICRON PATTERNING: STATE OF THE ART AND VISTAS.
The Amelioration.
Prospective Avenues.
ELECTRON BEAM LITHOGRAPHY.
Electron Beam Sources.
Resists.
Technology.
EBL Applications.
ION BEAM LITHOGRAPHY.
I-Beam Resists.
Exposure Techniques.
Parallel Processing with Ions.
Applications of Ion Beam Lithography.
Conclusions and Prenotations.
X-RAY LITHOGRAPHY.
Principle.
X-Ray Sources.
Enlarging the Exposure Field.
Beamline for Synchrotron Radiation.
X-Ray Masks.
X-Ray Resists.
Alignment Schemes.
X-Ray Lithography Systems.
NANOTECHNOLOGY: PRESENT DAY SCENARIO.
International Status.
Projections.
Index.
