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TAP-106:Rare earth oxide thin films稀土氧化物薄膜:生长、表征与应用

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  分類: 图书,进口原版书,科学与技术 Science & Techology ,

作者: Marco Fanciulli等著

出 版 社: 湖北辞书出版社

出版时间: 2006-11-1字数:版次: 1页数: 426印刷时间: 2006/11/01开本: 16开印次: 1纸张: 胶版纸I S B N : 9783540357964包装: 精装内容简介

Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

目录

Scientific and technological issues related to rare earth oxides : an introduction

Atomic layer deposition of rare earth oxides

MOCVD growth of rare earth oxides : the case of the praseodymium/oxygen system

Requirements of precursors for MOCVD and ALD of rare earth oxides

Models for ALD and MOCVD growth of rare earth oxides

Growth of oxides with complex stoichiometry by the ALD technique, exemplified by growth of La[subscript 1-x]Ca[subscript x]MnO[subscript

Molecular beam epitaxy of rare-earth oxides

Fabrication and characterization of rare earth scandate thin films prepared by pulsed laser deposition

Film and interface layer composition of rare earth (Lu, Yb) oxides deposited by ALD

Local atomic environment of high-[Kappa] oxides on silicon probed by x-ray absorption spectroscopy

Local structure, composition and electronic properties of rare earth oxide thin films studied using advanced transmission electron microscopy techniques (TEM-EELS)

Strain-relief at internal dielectric interfaces in high-k gate stacks with transition metal and rare earth atom oxide dielectrics

Electrical characterization of rare earth oxides grown by atomic layer deposition

Dielectric properties of rare-earth oxides : general trends from theory

Charge traps in high-k dielectrics : ab initio study of defects in Pr-based materials

Experimental determination of the band offset of rare earth oxides on various semiconductors

Band edge electronic structure of transition metal/rare earth oxide dielectrics

Electronic structure and band offset of lanthanide oxides

Electronic structure of rare earth oxides

Rare earth oxides in microelectronics

Requirements of oxides as gate dielectrics for CMOS devices

Rare earth oxides grown by molecular beam epitaxy for ultimate scaling

The magneto-electric properties of RMnO[subscript 3] compounds

Sesquioxides as host materials for rare-earth-doped bulk lasers and active waveguides

Table of Contents provided by Blackwell. All Rights Reserved.

 
 
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